Strain relaxation by alloying effects in Ge islands grown on Si(001)

Παρόμοια τεκμήρια

• Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
  ανά: Liao, X, κ.ά.
  Έκδοση: (2001)
• Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
  ανά: Merdzhanova T, κ.ά.
  Έκδοση: (2009-01-01)
• [001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
  ανά: Liao, X, κ.ά.
  Έκδοση: (2004)
• Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
  ανά: Zou, J, κ.ά.
  Έκδοση: (2002)
• Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
  ανά: Liao, X, κ.ά.
  Έκδοση: (2002)