Polycrystalline silicon field emitters
Field emission of electrons from polycrystalline silicon micropoint emitters has been investigated. Two process routes, wet and dry etching, were used to form emitters, and their morphologies were compared using a transmission electron microscope (TEM). TEM micrographs of the wet-etched polysilicon...
Prif Awduron: | Boswell, E, Huq, SE, Huang, M, Prewett, P, Wilshaw, P |
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Fformat: | Conference item |
Cyhoeddwyd: |
1996
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Eitemau Tebyg
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Polycrystalline silicon field emitters
gan: Boswell, E, et al.
Cyhoeddwyd: (1995) -
Fabrication of gated polycrystalline silicon field emitters
gan: Huq, SE, et al.
Cyhoeddwyd: (1996) -
Microfabrication and characterization of gridded polycrystalline silicon field emitter devices
gan: Huq, SE, et al.
Cyhoeddwyd: (1998) -
Microfabrication and characterisation of gridded polycrystalline silicon field emitter devices
gan: Huq, SE, et al.
Cyhoeddwyd: (1997) -
Enhanced field emission from polysilicon emitters using porous silicon
gan: Pullen, SE, et al.
Cyhoeddwyd: (1996)