Polycrystalline silicon field emitters
Field emission of electrons from polycrystalline silicon micropoint emitters has been investigated. Two process routes, wet and dry etching, were used to form emitters, and their morphologies were compared using a transmission electron microscope (TEM). TEM micrographs of the wet-etched polysilicon...
Asıl Yazarlar: | Boswell, E, Huq, SE, Huang, M, Prewett, P, Wilshaw, P |
---|---|
Materyal Türü: | Conference item |
Baskı/Yayın Bilgisi: |
1996
|
Benzer Materyaller
-
Polycrystalline silicon field emitters
Yazar:: Boswell, E, ve diğerleri
Baskı/Yayın Bilgisi: (1995) -
Fabrication of gated polycrystalline silicon field emitters
Yazar:: Huq, SE, ve diğerleri
Baskı/Yayın Bilgisi: (1996) -
Microfabrication and characterization of gridded polycrystalline silicon field emitter devices
Yazar:: Huq, SE, ve diğerleri
Baskı/Yayın Bilgisi: (1998) -
Microfabrication and characterisation of gridded polycrystalline silicon field emitter devices
Yazar:: Huq, SE, ve diğerleri
Baskı/Yayın Bilgisi: (1997) -
Enhanced field emission from polysilicon emitters using porous silicon
Yazar:: Pullen, SE, ve diğerleri
Baskı/Yayın Bilgisi: (1996)