TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENT OF CARRIER TRAPPING TIME OF INGAAS/INP QUANTUM WELLS
We have measured the diffusion and trapping of photoexcited hot carriers in a InGaAs/InP heterostructure using an optical time-of-flight technique with picosecond time resolution. The efficiency of trapping of carriers into the well is found to increase rapidly between 4 K and room temperature. A me...
Main Authors: | Westland, D, Mihailovic, D, Ryan, J, Scott, M |
---|---|
格式: | Journal article |
語言: | English |
出版: |
1988
|
相似書籍
-
OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE
由: Westland, D, et al.
出版: (1987) -
HOT CARRIER ENERGY-LOSS RATES IN GAINAS/INP QUANTUM WELLS
由: Westland, D, et al.
出版: (1988) -
Photoluminescence of ingaas/inp grown by molecular beam epitaxy
由: Harmand Jean Christophe, et al.
出版: (2004-01-01) -
TIME-RESOLVED PHOTOLUMINESCENCE FOR QUANTUM WELL SEMICONDUCTOR HETEROSTRUCTURES
由: Ryan, J
出版: (1985) -
Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
由: Ying Wang, et al.
出版: (2017-03-01)