TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENT OF CARRIER TRAPPING TIME OF INGAAS/INP QUANTUM WELLS

We have measured the diffusion and trapping of photoexcited hot carriers in a InGaAs/InP heterostructure using an optical time-of-flight technique with picosecond time resolution. The efficiency of trapping of carriers into the well is found to increase rapidly between 4 K and room temperature. A me...

Полное описание

Библиографические подробности
Главные авторы: Westland, D, Mihailovic, D, Ryan, J, Scott, M
Формат: Journal article
Язык:English
Опубликовано: 1988