Dimensional crossover in the carrier mobility of two-dimensional semiconductors: the case of InSe
Two-dimensional (2D) semiconductors are at the center of an intense research effort aimed at developing the next generation of flexible, transparent, and energy-efficient electronics. In these applications, the carrier mobility, that is the ability of electrons and holes to move rapidly in response...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
American Chemical Society
2019
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