DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
A new theory is proposed for recombination at charged dislocations in semiconductors. This is applied to EBIC contrast from individual dislocations.
| Main Authors: | , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1986
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