Development of sputtered nitrogen-doped Li1+xAlxGe2-x(PO4)3 thin films for solid state batteries

<p>Nitrogen-doped Li<sub>1+x</sub>Al<sub>x</sub>Ge<sub>2-x</sub>(PO<sub>4</sub>)<sub>3</sub>&nbsp;(LAGP) thin films were prepared by&nbsp;magnetron sputtering&nbsp;in a mixture of Ar&nbsp;+&nbsp;N<sub>2</s...

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Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид: Mousavi, T, Slattery, I, Jagger, B, Liu, J, Speller, S, Grovenor, C
Формат: Journal article
Хэл сонгох:English
Хэвлэсэн: Elsevier 2021