Severs, J., Lozano, J., Hooper, S., & Nellist, P. (2014). Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing.
Cita Chicago (17th ed.)Severs, J., J. Lozano, S. Hooper, i P. Nellist. Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing, 2014.
Cita MLA (9th ed.)Severs, J., et al. Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing, 2014.
Atenció: Aquestes cites poden no estar 100% correctes.