Severs, J., Lozano, J., Hooper, S., & Nellist, P. (2014). Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing.
Чикаго-гийн эшлэл (17 дахь хэвлэлт)Severs, J., J. Lozano, S. Hooper, ба P. Nellist. Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing, 2014.
MLA -ийн эшлэл (9 дэх хэвлэлт)Severs, J., et al. Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing, 2014.
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