Severs, J., Lozano, J., Hooper, S., & Nellist, P. (2014). Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing.
Chicago Style (17th ed.) CitationSevers, J., J. Lozano, S. Hooper, and P. Nellist. Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing, 2014.
MLA引文Severs, J., et al. Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing, 2014.
警告:這些引文格式不一定是100%准確.