Severs, J., Lozano, J., Hooper, S., & Nellist, P. (2014). Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing.
芝加哥风格引文Severs, J., J. Lozano, S. Hooper, 与 P. Nellist. Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing, 2014.
MLA引文Severs, J., et al. Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes. Institute of Physics Publishing, 2014.
警告：这些引文格式不一定是100％准确.