On the locking of dislocations by oxygen in silicon

On the locking of dislocations by oxygen in silicon

Locking of dislocations by oxygen atoms in Czochralski silicon has been investigated both experimentally and theoretically. Experiments were performed at annealing temperatures between 700 and 850°C for different annealing times and different oxygen concentrations. These showed five distinct regimes...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	Senkader, S, Jurkschat, K, Gambaro, D, Falster, R, Wilshaw, P
Формат:	Journal article
Хэл сонгох:	English
Хэвлэсэн:	2001

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