Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging
In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging - in the scanning electron microscope - to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a jus...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2006
|