Band offsets at the Si/SiO2 interface from many-body perturbation theory.

Band offsets at the Si/SiO2 interface from many-body perturbation theory.

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We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to compute the band offsets at the Si/SiO2 interface. We examine the adequacy of the usual approximations in this context. We show that (i) the separate treatment of band structure and potential lineup contr...

Полное описание

Библиографические подробности
Главные авторы:	Shaltaf, R, Rignanese, G, Gonze, X, Giustino, F, Pasquarello, A
Формат:	Journal article
Язык:	English
Опубликовано:	2008

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