The structural properties of GaN grown on Si substrates by using various annealing conditions for the AlN buffer layers
We have studied the effect of annealing AIN buffer layers on the properties of subsequently grown GaN layers. The AIN buffer layer was deposited on a Si(111) substrate by using RF sputtering, and different samples were then annealed at temperatures of 700 degrees C, 800 degrees C, and 900 degrees C....
| Main Authors: | , , , , , , , , |
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| Format: | Conference item |
| Published: |
2006
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