An SEM EBIC study of the electronic properties of dislocations in silicon

An SEM EBIC study of the electronic properties of dislocations in silicon

<p>Individual, well structurally characterised dislocations present in n-type silicon have been studied using the electron beam induced current (EBIC) mode of an SEM.</p>An EBIC system has been designed and constructed which includes i) phase sensitive detection, ii) computerised contro...

Bibliografiset tiedot
Päätekijät:	Wilshaw, P, Wilshaw, Peter
Muut tekijät:	Ourmazd, A
Aineistotyyppi:	Opinnäyte
Kieli:	English
Julkaistu:	1984
Aiheet:	Dislocations in metals Defects Silicon Scanning electron microscopy

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