An SEM EBIC study of the electronic properties of dislocations in silicon

An SEM EBIC study of the electronic properties of dislocations in silicon

<p>Individual, well structurally characterised dislocations present in n-type silicon have been studied using the electron beam induced current (EBIC) mode of an SEM.</p>An EBIC system has been designed and constructed which includes i) phase sensitive detection, ii) computerised contro...

書誌詳細
主要な著者:	Wilshaw, P, Wilshaw, Peter
その他の著者:	Ourmazd, A
フォーマット:	学位論文
言語:	English
出版事項:	1984
主題:	Dislocations in metals Defects Silicon Scanning electron microscopy

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