An SEM EBIC study of the electronic properties of dislocations in silicon

An SEM EBIC study of the electronic properties of dislocations in silicon

<p>Individual, well structurally characterised dislocations present in n-type silicon have been studied using the electron beam induced current (EBIC) mode of an SEM.</p>An EBIC system has been designed and constructed which includes i) phase sensitive detection, ii) computerised contro...

Полное описание

Библиографические подробности
Главные авторы:	Wilshaw, P, Wilshaw, Peter
Другие авторы:	Ourmazd, A
Формат:	Диссертация
Язык:	English
Опубликовано:	1984
Предметы:	Dislocations in metals Defects Silicon Scanning electron microscopy

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