TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE

TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE

Manylion Llyfryddiaeth
Prif Awduron:	Nicholas, R, Kressrogers, E, Portal, J, Galibert, J, Chevy, A
Fformat:	Journal article
Cyhoeddwyd:	1982

Eitemau Tebyg

CYCLOTRON-RESONANCE STUDIES ON BULK AND TWO-DIMENSIONAL CONDUCTION ELECTRONS IN INSE
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THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
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THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
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Two-dimensional magnetopolaron coupling to both homopolar and longitudinal optic phonons in the layer compound InSe
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Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe
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2D CYCLOTRON-RESONANCE AND MAGNETOPOLARON COUPLING TO HOMOPOLAR AND LO PHONONS IN THE LAYERED SEMICONDUCTOR INSE
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Dimensional crossover in the carrier mobility of two-dimensional semiconductors: the case of InSe
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Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers
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Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE
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Haruan makan anak : inses di Semenanjung Malaysia /
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