MODULATED MOLECULAR-BEAM MASS-SPECTROMETRY STUDIES OF THE GROWTH OF GAAS AND INXGA1-XAS USING TRI-ISOBUTYLGALLIUM
Modulated molecular beam mass spectroscopy (MBMS) studies of the CBE growth of GaAs and InxGa1-xAs using tri-isobutylgallium (TiBG) have been carried out. The results show similarities to studies which have been carried out previously using triethylgallium (TEG) in that hey indicate that the GRa dep...
Autori principali: | Levoguer, C, Foord, J, Davies, G, Skevington, P |
---|---|
Natura: | Conference item |
Pubblicazione: |
Elsevier
1994
|
Documenti analoghi
Documenti analoghi
-
COMPARATIVE-STUDIES OF THE THERMAL-DECOMPOSITION OF TRITERTIARYBUTYLGALLIUM AND TRI-ISOBUTYLGALLIUM ON GAAS(100)
di: Fitzgerald, E, et al.
Pubblicazione: (1992) -
GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE
di: Singh, N, et al.
Pubblicazione: (1992) -
MINIBAND STRUCTURE IN INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES
di: Pulsford, N, et al.
Pubblicazione: (1991) -
SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
di: Oleg V. Devitsky, et al.
Pubblicazione: (2022-05-01) -
The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy
di: Elcess, Kimberley
Pubblicazione: (2017)