Synthesis of two-dimensional hexagonal boron nitride and tin-derivative dichalcogenides for nanoelectronic applications
<p>The discovery of graphene (Gr) has so far drawn significant attention and expanded into the development of other two-dimensional (2D) materials with complementary electronic properties over the past few years. Molybdenum disulfide (MoS<sub>2</sub>) and tungsten disulfide (WS2) a...
第一著者: | Chang, R-J |
---|---|
その他の著者: | Warner, J |
フォーマット: | 学位論文 |
言語: | English |
出版事項: |
2019
|
主題: |
類似資料
-
Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper
著者:: Tay, Roland Yingjie, 等
出版事項: (2014) -
Nanoelectronic device applications handbook
著者:: IEEE International Conference on Nanatechnology ( 11:2011:Portland, Ore.), 等
出版事項: (2013) -
Synthesis and applications of transition metal dichalcogenide-based nanomaterials
著者:: Shi, Zhenyu
出版事項: (2021) -
Nanoelectronics : nanowires, molecular electronics, and nanodevices /
著者:: Iniewski, Krzysztof.
出版事項: (c201) -
Emerging nanoelectronic devices /
著者:: Chen, An (Electronics engineer), 等
出版事項: (2014)