Synthesis of two-dimensional hexagonal boron nitride and tin-derivative dichalcogenides for nanoelectronic applications
<p>The discovery of graphene (Gr) has so far drawn significant attention and expanded into the development of other two-dimensional (2D) materials with complementary electronic properties over the past few years. Molybdenum disulfide (MoS<sub>2</sub>) and tungsten disulfide (WS2) a...
Главный автор: | Chang, R-J |
---|---|
Другие авторы: | Warner, J |
Формат: | Диссертация |
Язык: | English |
Опубликовано: |
2019
|
Предметы: |
Схожие документы
-
Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper
по: Tay, Roland Yingjie, и др.
Опубликовано: (2014) -
Nanoelectronic device applications handbook
по: IEEE International Conference on Nanatechnology ( 11:2011:Portland, Ore.), и др.
Опубликовано: (2013) -
Synthesis and applications of transition metal dichalcogenide-based nanomaterials
по: Shi, Zhenyu
Опубликовано: (2021) -
Nanoelectronics : nanowires, molecular electronics, and nanodevices /
по: Iniewski, Krzysztof.
Опубликовано: (c201) -
Emerging nanoelectronic devices /
по: Chen, An (Electronics engineer), и др.
Опубликовано: (2014)