Semi-insulating silicon for microwave devices
The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room tempe...
| Main Authors: | , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
Trans Tech Publications Ltd
2009
|