Semi-insulating silicon for microwave devices

Semi-insulating silicon for microwave devices

The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room tempe...

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Bibliografiske detaljer
Main Authors:	Jordan, D, Mallik, K, Falster, R, Wilshaw, P
Format:	Journal article
Sprog:	English
Udgivet:	Trans Tech Publications Ltd 2009

Lignende værker

The Development of Semi-Insulating Silicon Substrates for Microwave Devices
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The development of semi-insulating silicon substrates for microwave devices
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Near-band gap luminescence at room temperature from dislocations in silicon
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Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
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Locking of dislocations by oxygen in Cz-silicon
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Udgivet: (1999)

The segregation behaviour of oxygen at dislocations in silicon
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Udgivet: (1999)

Schottky diode back contacts for high frequency capacitance studies on semiconductors
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Udgivet: (1991)

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Udgivet: (1990)

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Udgivet: (1992)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
af: Decoteau, M, et al.
Udgivet: (1991)

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Udgivet: (1991)

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Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
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Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
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Nitrogen diffusion and interaction with dislocations in single-crystal silicon
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The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
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Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
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Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
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Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
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Nitrogen in silicon: Transport and mechanical properties
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Udgivet: (2006)

Nitrogen in silicon: Transport and mechanical properties
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The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers
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Udgivet: (2003)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
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GETTERING IN SILICON
af: Falster, R
Udgivet: (1989)