Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

Show other versions (1)

Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point. Oxide precipitates therefore can form during ingot cooling and cell processing, and nucleation sites are typically vacancy-rich regions. Oxygen...

Fuld beskrivelse

Bibliografiske detaljer
Main Authors:	Murphy, J, McGuire, R, Bothe, K, Voronkov, V, Falster, R
Format:	Journal article
Udgivet:	Elsevier 2014

Lignende værker

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
af: Murphy, J, et al.
Udgivet: (2014)

The impact of oxide precipitates on minority carrier lifetime in Czochralski silicon
af: Murphy, J, et al.
Udgivet: (2012)

Minority carrier lifetime in Czochralski silicon containing oxide precipitates
af: Murphy, J, et al.
Udgivet: (2010)

The effect of oxide precipitates on minority carrier lifetime in p-type silicon
af: Murphy, J, et al.
Udgivet: (2011)

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
af: Murphy, J, et al.
Udgivet: (2012)

On the mechanism of recombination at oxide precipitates in silicon
af: Murphy, J, et al.
Udgivet: (2013)

Recombination at oxide precipitates in silicon
af: Murphy, J, et al.
Udgivet: (2011)

Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in silicon
af: Fraser, K, et al.
Udgivet: (2009)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
af: Fraser, K, et al.
Udgivet: (2008)

Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
af: Bothe, K, et al.
Udgivet: (2012)

Effective minority carrier lifetime in double-sided macroporous silicon
af: V.F. Onyshchenko, et al.
Udgivet: (2020-03-01)

Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids
af: V.F. Onyshchenko, et al.
Udgivet: (2017-10-01)

Photoconductivity and minority carrier lifetime in tin sulfide and gallium arsenide semiconductors for photovoltaics
af: Lenahan, Frances Daggett
Udgivet: (2016)

Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements
af: M. Solcansky, et al.
Udgivet: (2012-01-01)

Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films
af: Shinya Kato, et al.
Udgivet: (2017-03-01)

Exceeding 3 ms Minority Carrier Lifetime in n–type Non-contact Crucible Silicon
af: Kivambe, Maulid, et al.
Udgivet: (2018)

Spin-dependent recombination in Czochralski silicon containing oxide precipitates
af: Lang, V, et al.
Udgivet: (2012)

Temperature dependence of carrier lifetime in silicon/
af: 269208 Sandiford, D. J., et al.
Udgivet: ([n.d)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
af: Murphy, J, et al.
Udgivet: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
af: Murphy, J, et al.
Udgivet: (2006)

Effects of damages induced by indium-tin-oxide reactive plasma deposition on minority carrier lifetime in silicon crystal
af: Takefumi Kamioka, et al.
Udgivet: (2019-10-01)

Understanding of Molecular Contribution of Quinhydrone/Methanol Organic Passivation for Improved Minority Carrier Lifetime on Nanostructured Silicon Surface
af: Jea-Young Choi
Udgivet: (2019-09-01)

Locking of dislocations by oxygen in Cz-silicon
af: Senkader, S, et al.
Udgivet: (1999)

Experimental Determination of Effective Minority Carrier Lifetime in HgCdTe Photovoltaic Detectors Using Optical and Electrical Methods
af: Haoyang Cui, et al.
Udgivet: (2015-01-01)

On the locking of dislocations by oxygen in silicon
af: Senkader, S, et al.
Udgivet: (2001)

In situ minority carrier lifetime via fast modulated photoluminescence
af: Poplawski Mateusz, et al.
Udgivet: (2023-01-01)

Onset of slip in silicon containing oxide precipitates
af: Jurkschat, K, et al.
Udgivet: (2001)

Lifetime in semiconductors : an apparatus for the measurement of carrier liftmen in silicon /
af: 269176 Rose, F. W. G., et al.

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
af: Giannattasio, A, et al.
Udgivet: (2005)

New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells
af: A. Zerga, et al.
Udgivet: (2003-01-01)

New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells
af: M. Benosman, et al.
Udgivet: (2001-01-01)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
af: Decoteau, M, et al.
Udgivet: (1991)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
af: Decoteau, M, et al.
Udgivet: (1991)

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
af: Senkader, S, et al.
Udgivet: (2004)

The segregation behaviour of oxygen at dislocations in silicon
af: Senkader, S, et al.
Udgivet: (1999)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
af: Murphy, J, et al.
Udgivet: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
af: Murphy, J, et al.
Udgivet: (2006)

Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime
af: Blum, A, et al.
Udgivet: (2014)

Reference samples of the silicon single crystalls free carrier recombination lifetime
af: S. P. Kobeleva, et al.
Udgivet: (2017-05-01)

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES
af: Decoteau, M, et al.
Udgivet: (1991)