Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

Εμφάνιση άλλων εκδόσεων (1)

Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point. Oxide precipitates therefore can form during ingot cooling and cell processing, and nucleation sites are typically vacancy-rich regions. Oxygen...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Murphy, J, McGuire, R, Bothe, K, Voronkov, V, Falster, R
Μορφή:	Journal article
Έκδοση:	Elsevier 2014

Παρόμοια τεκμήρια

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ανά: Murphy, J, κ.ά.
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ανά: M. Solcansky, κ.ά.
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Έκδοση: (2017-03-01)

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ανά: Lang, V, κ.ά.
Έκδοση: (2012)

Temperature dependence of carrier lifetime in silicon/
ανά: 269208 Sandiford, D. J., κ.ά.
Έκδοση: ([n.d)

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ανά: Murphy, J, κ.ά.
Έκδοση: (2006)

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ανά: Senkader, S, κ.ά.
Έκδοση: (1999)

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ανά: Haoyang Cui, κ.ά.
Έκδοση: (2015-01-01)

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ανά: Senkader, S, κ.ά.
Έκδοση: (2001)

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ανά: Poplawski Mateusz, κ.ά.
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ανά: Jurkschat, K, κ.ά.
Έκδοση: (2001)

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ανά: 269176 Rose, F. W. G., κ.ά.

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ανά: Giannattasio, A, κ.ά.
Έκδοση: (2005)

New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells
ανά: A. Zerga, κ.ά.
Έκδοση: (2003-01-01)

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ανά: M. Benosman, κ.ά.
Έκδοση: (2001-01-01)

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ανά: Decoteau, M, κ.ά.
Έκδοση: (1991)

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ανά: Decoteau, M, κ.ά.
Έκδοση: (1991)

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
ανά: Senkader, S, κ.ά.
Έκδοση: (2004)

The segregation behaviour of oxygen at dislocations in silicon
ανά: Senkader, S, κ.ά.
Έκδοση: (1999)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
ανά: Murphy, J, κ.ά.
Έκδοση: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
ανά: Murphy, J, κ.ά.
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Έκδοση: (2014)

Reference samples of the silicon single crystalls free carrier recombination lifetime
ανά: S. P. Kobeleva, κ.ά.
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ανά: Decoteau, M, κ.ά.
Έκδοση: (1991)