SEM imaging of contrast arising from different doping concentrations in semiconductors
A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structures is reported. The SE signal of standard and field-emission SEMs is used to produce images in which contrast between n- and p-doped layers is visible. The contrast arising from the differently doped...
| Main Authors: | , , , |
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| Format: | Conference item |
| Published: |
1995
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