Hydrocarbon adsorption on Si(001): When does the Si dimer bond break?

Hydrocarbon adsorption on Si(001): When does the Si dimer bond break?

Manylion Llyfryddiaeth
Prif Awduron:	Fisher, A, Blochl, P, Briggs, G
Fformat:	Journal article
Cyhoeddwyd:	1997

Eitemau Tebyg

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1999)

Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures
gan: Norenberg, H, et al.
Cyhoeddwyd: (1998)

Nucleation and growth of CoSi2 dots on Si(001)
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1999)

IDENTIFICATION OF THE SI(001) MISSING DIMER DEFECT STRUCTURE BY LOW-BIAS VOLTAGE STM AND LDA MODELING
gan: Owen, J, et al.
Cyhoeddwyd: (1995)

Hydrogen diffusion on Si(001)
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Cyhoeddwyd: (1996)

Diffusion of paired hydrogen on Si(001)
gan: Bowler, DR, et al.
Cyhoeddwyd: (1998)

Finite element analysis of CoSi2 nanocrystals on Si(001)
gan: Goldfarb, I, et al.
Cyhoeddwyd: (2002)

Atomically perfect bismuth lines on Si(001)
gan: Miki, K, et al.
Cyhoeddwyd: (1999)

Bismuth-induced structures on Si(001) surfaces
gan: Miki, K, et al.
Cyhoeddwyd: (1999)

Competing growth mechanisms of Ge/Si(001) coherent clusters
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1997)

Reactive deposition epitaxy of CoSi2 nanostructures on Si(001): Nucleation and growth and evolution of dots during anneal
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1999)

An experimental-theoretical study of the behaviour of hydrogen on the Si(001) surface
gan: Bowler, DR, et al.
Cyhoeddwyd: (2000)

Morphology Analysis of Si Island Arrays on Si(001)
gan: González-González A, et al.
Cyhoeddwyd: (2010-01-01)

The incommensurate nature of epitaxial titanium disilicide islands on Si(001)
gan: Briggs, G, et al.
Cyhoeddwyd: (2000)

Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
gan: Owen, J, et al.
Cyhoeddwyd: (1997)

Influence of carbon on the formation of the Si(001) c(4 x 4) surface reconstruction
gan: Norenberg, H, et al.
Cyhoeddwyd: (1999)

Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy
gan: Robert Balsano, et al.
Cyhoeddwyd: (2013-11-01)

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
gan: Lang, C, et al.
Cyhoeddwyd: (2003)

An elevated temperature STM study of the Si(001) c(4x4) surface reconstruction
gan: Norenberg, H, et al.
Cyhoeddwyd: (1999)

The Si(001) c(4 x 4) surface reconstruction: a comprehensive experimental study
gan: Norenberg, H, et al.
Cyhoeddwyd: (1999)

Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1997)

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
gan: Liao, X, et al.
Cyhoeddwyd: (2004)

Atomistic simulation of epitaxial Si film growth on Si (001) surface
gan: Xie, Xuepeng.
Cyhoeddwyd: (2008)

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
gan: Jian-Huan Wang, et al.
Cyhoeddwyd: (2021-03-01)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
gan: Aleksei V. Kolesnikov, et al.
Cyhoeddwyd: (2015-03-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
gan: Ma Yingjie, et al.
Cyhoeddwyd: (2011-01-01)

Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
gan: Owen, J, et al.
Cyhoeddwyd: (1997)

In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1998)

Effect of Al and Ta Impurities on Si Adsorption on (001) and (111) Surfaces of B1-TiN
gan: Yury M. Koroteev, et al.
Cyhoeddwyd: (2024-12-01)

Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1997)

AN STM STUDY OF THE CHEMISORPTION OF C2H4 ON SI(001)(2X1)
gan: Mayne, A, et al.
Cyhoeddwyd: (1993)

Epitaxial Integration of Dirac Semimetals with Si(001)
gan: Anthony Rice, et al.
Cyhoeddwyd: (2023-03-01)

Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
gan: Lang, C, et al.
Cyhoeddwyd: (2005)

The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
gan: Lang, C, et al.
Cyhoeddwyd: (2004)

First principles study of GeSi exchange mechanisms at the Si(001) surface
gan: Zipoli, F, et al.
Cyhoeddwyd: (2008)

Band-offset determination and excitons in SiGe/Si(001) quantum wells
gan: Cheng, H, et al.
Cyhoeddwyd: (2000)

Effects of Si(001) surface amorphization on ErSi2 thin film
gan: Pey, Kin Leong, et al.
Cyhoeddwyd: (2013)

Experimental estimation of oxidation-induced Si atoms emission on Si(001) surfaces
gan: Shuichi Ogawa, et al.
Cyhoeddwyd: (2015-08-01)

Stress and relief of misfit strain of Ge/Si(001)
gan: Wedler, G, et al.
Cyhoeddwyd: (1998)

SERS Amplification in Au/Si Asymmetric Dimer Array Coupled to Efficient Adsorption of Thiophenol Molecules
gan: Grégory Barbillon, et al.
Cyhoeddwyd: (2021-06-01)