Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging
Secondary electron (SE) imaging in a scanning electron microscope is used to map electrically active dopant distributions of B-doped superlattices in Si. By comparing SE contrast profiles with secondary ion mass spectroscopy data, it is shown that B is electrically deactivated when the damage caused...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
American Institute of Physics
1999
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| Subjects: |