Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging
Secondary electron (SE) imaging in a scanning electron microscope is used to map electrically active dopant distributions of B-doped superlattices in Si. By comparing SE contrast profiles with secondary ion mass spectroscopy data, it is shown that B is electrically deactivated when the damage caused...
| Main Authors: | , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
American Institute of Physics
1999
|
| Subjects: |
| Summary: | Secondary electron (SE) imaging in a scanning electron microscope is used to map electrically active dopant distributions of B-doped superlattices in Si. By comparing SE contrast profiles with secondary ion mass spectroscopy data, it is shown that B is electrically deactivated when the damage caused during Si implantation falls onto a doped region. Following a 450°C anneal, the effect of the implantation damage is severely reduced in the SE profiles and the B is partially reactivated. An 815°C anneal results in transient enhanced diffusion of some of the B with the remainder trapped in an inactive immobile peak. |
|---|