SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
A system is described incorporating a PDP11/03 minicomputer for control and on-line data collection of a lock-in EBIC set up based on a JSM-35X SEM. The system has been primarily used for the measurement of EBIC contrast from individual deformation-induced dislocations in Si. In order to interpret t...
| Main Authors: | , , |
|---|---|
| Format: | Conference item |
| Published: |
1983
|