Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

Podobné jednotky

• Electronic and dielectric properties of a suboxide interlayer at the silicon-oxide interface in MOS devices
  Autor: Giustino, F, a další
  Vydáno: (2005)
• Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.
  Autor: Giustino, F, a další
  Vydáno: (2003)
• Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon
  Autor: Giustino, F, a další
  Vydáno: (2005)
• Atomistic models of the Si(100)-SiO(2) interface: structural, electronic and dielectric properties
  Autor: Giustino, F, a další
  Vydáno: (2005)
• Atomic-scale investigation of the dielectric screening at the interface between silicon and its oxide
  Autor: Giustino, F, a další
  Vydáno: (2004)