Skip to content
VuFind
    • English
    • Deutsch
    • Español
    • Français
    • Italiano
    • 日本語
    • Nederlands
    • Português
    • Português (Brasil)
    • 中文(简体)
    • 中文(繁體)
    • Türkçe
    • עברית
    • Gaeilge
    • Cymraeg
    • Ελληνικά
    • Català
    • Euskara
    • Русский
    • Čeština
    • Suomi
    • Svenska
    • polski
    • Dansk
    • slovenščina
    • اللغة العربية
    • বাংলা
    • Galego
    • Tiếng Việt
    • Hrvatski
    • हिंदी
    • Հայերէն
    • Українська
    • Sámegiella
    • Монгол
高级检索
  • Dielectric effect of a thin Si...
  • 引用
  • 发送短信
  • 推荐此
  • 打印
  • 导出纪录
    • 导出到 RefWorks
    • 导出到 EndNoteWeb
    • 导出到 EndNote
  • Permanent link
Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

书目详细资料
Main Authors: Giustino, F, Umari, P, Pasquarello, A
格式: Conference item
出版: 2004
  • 持有资料
  • 实物特征
  • 相似书籍
  • 职员浏览

相似书籍

  • Electronic and dielectric properties of a suboxide interlayer at the silicon-oxide interface in MOS devices
    由: Giustino, F, et al.
    出版: (2005)
  • Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.
    由: Giustino, F, et al.
    出版: (2003)
  • Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon
    由: Giustino, F, et al.
    出版: (2005)
  • Atomistic models of the Si(100)-SiO(2) interface: structural, electronic and dielectric properties
    由: Giustino, F, et al.
    出版: (2005)
  • Atomic-scale investigation of the dielectric screening at the interface between silicon and its oxide
    由: Giustino, F, et al.
    出版: (2004)

检索选项

  • 检索历史
  • 高级检索

查找更多

  • 浏览目录
  • 按字母顺序浏览
  • 探索频道
  • 课程储备
  • 新项目

需要帮助?

  • 检索技巧
  • 咨询台
  • 常见问题