Atom probe tomography of crystallographic defects in silicon
<p>High performance multicrystalline silicon (HPMC-Si) is the dominant material used in photovoltaic (PV) devices. This material however contains a large number of defects, such as grain boundaries and dislocations. The decoration of such defects by transition metals and other impurities cause...
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| Формат: | Дипломын ажил |
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2019
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