Atom probe tomography of crystallographic defects in silicon

<p>High performance multicrystalline silicon (HPMC-Si) is the dominant material used in photovoltaic (PV) devices. This material however contains a large number of defects, such as grain boundaries and dislocations. The decoration of such defects by transition metals and other impurities cause...

Szczegółowa specyfikacja

Opis bibliograficzny
1. autor: Tweddle, D
Kolejni autorzy: Moody, M
Format: Praca dyplomowa
Wydane: 2019
Hasła przedmiotowe: