Ion-implanted GaAs for ultrafast saturable absorber applications
The status of our work on Arsenic and Oxygen implanted GaAs for ultrafast saturable absorber applications is reviewed. We show that the response time and absorption modulation are both reduced by implantation whilst the nonbleachable losses increase. Similar combinations of response time and modulat...
| Main Authors: | , , , , , , , , |
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| Format: | Conference item |
| Published: |
2000
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