Ion-implanted GaAs for ultrafast saturable absorber applications
The status of our work on Arsenic and Oxygen implanted GaAs for ultrafast saturable absorber applications is reviewed. We show that the response time and absorption modulation are both reduced by implantation whilst the nonbleachable losses increase. Similar combinations of response time and modulat...
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| Format: | Conference item |
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2000
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| _version_ | 1826298070577446912 |
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| author | Lederer, M Luther-Davies, B Tan, H Jagadish, C Haiml, M Siegner, U Keller, U Zou, J Cockayne, D |
| author_facet | Lederer, M Luther-Davies, B Tan, H Jagadish, C Haiml, M Siegner, U Keller, U Zou, J Cockayne, D |
| author_sort | Lederer, M |
| collection | OXFORD |
| description | The status of our work on Arsenic and Oxygen implanted GaAs for ultrafast saturable absorber applications is reviewed. We show that the response time and absorption modulation are both reduced by implantation whilst the nonbleachable losses increase. Similar combinations of response time and modulation can be achieved using either ion species and various combinations of dose and annealing temperatures. Furthermore, it is shown that, in order to exploit the full capacity of this material, amorphisation during implantation should be avoided, and the samples should be annealed afterwards, leading to the predominance of point defects. We give several guidelines to the creation of a high performance GaAs saturable absorber through implantation. Response times < 400fs are achievable while still maintaining 80% of the absorption modulation of unimplanted GaAs. |
| first_indexed | 2024-03-07T04:41:13Z |
| format | Conference item |
| id | oxford-uuid:d1b8e531-4971-4d34-9bba-9ba2d306901e |
| institution | University of Oxford |
| last_indexed | 2024-03-07T04:41:13Z |
| publishDate | 2000 |
| record_format | dspace |
| spelling | oxford-uuid:d1b8e531-4971-4d34-9bba-9ba2d306901e2022-03-27T07:58:54ZIon-implanted GaAs for ultrafast saturable absorber applicationsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:d1b8e531-4971-4d34-9bba-9ba2d306901eSymplectic Elements at Oxford2000Lederer, MLuther-Davies, BTan, HJagadish, CHaiml, MSiegner, UKeller, UZou, JCockayne, DThe status of our work on Arsenic and Oxygen implanted GaAs for ultrafast saturable absorber applications is reviewed. We show that the response time and absorption modulation are both reduced by implantation whilst the nonbleachable losses increase. Similar combinations of response time and modulation can be achieved using either ion species and various combinations of dose and annealing temperatures. Furthermore, it is shown that, in order to exploit the full capacity of this material, amorphisation during implantation should be avoided, and the samples should be annealed afterwards, leading to the predominance of point defects. We give several guidelines to the creation of a high performance GaAs saturable absorber through implantation. Response times < 400fs are achievable while still maintaining 80% of the absorption modulation of unimplanted GaAs. |
| spellingShingle | Lederer, M Luther-Davies, B Tan, H Jagadish, C Haiml, M Siegner, U Keller, U Zou, J Cockayne, D Ion-implanted GaAs for ultrafast saturable absorber applications |
| title | Ion-implanted GaAs for ultrafast saturable absorber applications |
| title_full | Ion-implanted GaAs for ultrafast saturable absorber applications |
| title_fullStr | Ion-implanted GaAs for ultrafast saturable absorber applications |
| title_full_unstemmed | Ion-implanted GaAs for ultrafast saturable absorber applications |
| title_short | Ion-implanted GaAs for ultrafast saturable absorber applications |
| title_sort | ion implanted gaas for ultrafast saturable absorber applications |
| work_keys_str_mv | AT ledererm ionimplantedgaasforultrafastsaturableabsorberapplications AT lutherdaviesb ionimplantedgaasforultrafastsaturableabsorberapplications AT tanh ionimplantedgaasforultrafastsaturableabsorberapplications AT jagadishc ionimplantedgaasforultrafastsaturableabsorberapplications AT haimlm ionimplantedgaasforultrafastsaturableabsorberapplications AT siegneru ionimplantedgaasforultrafastsaturableabsorberapplications AT kelleru ionimplantedgaasforultrafastsaturableabsorberapplications AT zouj ionimplantedgaasforultrafastsaturableabsorberapplications AT cockayned ionimplantedgaasforultrafastsaturableabsorberapplications |