Structural, optical and electrical properties of In4Sn3O12 films prepared by pulsed laser deposition
Highly conducting (σ ∼ 2.6 × 103 Ω-1 cm-1) In4Sn3O12 films have been deposited using pulsed laser deposition (PLD) on glass and quartz substrates held at temperatures between 350 and 550 °C under chamber pressures of between 2.5 and 15 mTorr O2. The crystallinity and the surface roughness of the fil...
| Main Authors: | , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2010
|