Validity of Vegard’s rule for Al₁₋ₓ Inₓ N (0.08
In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements allow a comprehensive characterization of Al1-xInxN thin films grown on GaN. Within the limits of experimental accuracy, and in the compositional range 0.08 < x < 0.28, the l...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Journal article |
| Published: |
Institute of Physics
2017
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