{111} and {311} rod-like defects in silicon ion implanted silicon
Rodlike defects in Si ion implantated Si have been studied by transmission electron microscopy and molecular dynamics calculations, Three aspects of these defects are presented here: (1) The defects with (111) habit planes have been identified and the interstitial nature of these defects has been co...
| Main Authors: | , , , , |
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| Format: | Conference item |
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1996
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