{111} and {311} rod-like defects in silicon ion implanted silicon
Rodlike defects in Si ion implantated Si have been studied by transmission electron microscopy and molecular dynamics calculations, Three aspects of these defects are presented here: (1) The defects with (111) habit planes have been identified and the interstitial nature of these defects has been co...
| Main Authors: | , , , , |
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| Format: | Conference item |
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1996
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| _version_ | 1797096723484508160 |
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| author | Chou, C Cockayne, D Zou, J Kringhoj, P Jagadish, C |
| author_facet | Chou, C Cockayne, D Zou, J Kringhoj, P Jagadish, C |
| author_sort | Chou, C |
| collection | OXFORD |
| description | Rodlike defects in Si ion implantated Si have been studied by transmission electron microscopy and molecular dynamics calculations, Three aspects of these defects are presented here: (1) The defects with (111) habit planes have been identified and the interstitial nature of these defects has been confirmed by matching of the experimental and the calculated images based on the model established by atomistic calculations, (2) The defects with (311) habit planes have complicated high resolution electron microscopy images, This is explained by the coexistence of the Tan model and the Takeda model along an interstitial chain, A bond reconstruction is involved to transform the Tan model into the Takeda model, The energy barrier for this reconstruction is about 1.5 eV. (3) The early stage of the formation of a (011) interstitial chain has been studied by molecular dynamics calculations, when two interstitial atoms form a dimer an interstitial chain with a unit length of the Tan model or the Takeda model is formed, leaving two dangling bonds at two ends promoting other interstitial atoms to stick on to the dimer along the (011) direction. |
| first_indexed | 2024-03-07T04:45:36Z |
| format | Conference item |
| id | oxford-uuid:d326f3fe-9269-47d4-b805-40bf0ea51602 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T04:45:36Z |
| publishDate | 1996 |
| record_format | dspace |
| spelling | oxford-uuid:d326f3fe-9269-47d4-b805-40bf0ea516022022-03-27T08:09:16Z{111} and {311} rod-like defects in silicon ion implanted siliconConference itemhttp://purl.org/coar/resource_type/c_5794uuid:d326f3fe-9269-47d4-b805-40bf0ea51602Symplectic Elements at Oxford1996Chou, CCockayne, DZou, JKringhoj, PJagadish, CRodlike defects in Si ion implantated Si have been studied by transmission electron microscopy and molecular dynamics calculations, Three aspects of these defects are presented here: (1) The defects with (111) habit planes have been identified and the interstitial nature of these defects has been confirmed by matching of the experimental and the calculated images based on the model established by atomistic calculations, (2) The defects with (311) habit planes have complicated high resolution electron microscopy images, This is explained by the coexistence of the Tan model and the Takeda model along an interstitial chain, A bond reconstruction is involved to transform the Tan model into the Takeda model, The energy barrier for this reconstruction is about 1.5 eV. (3) The early stage of the formation of a (011) interstitial chain has been studied by molecular dynamics calculations, when two interstitial atoms form a dimer an interstitial chain with a unit length of the Tan model or the Takeda model is formed, leaving two dangling bonds at two ends promoting other interstitial atoms to stick on to the dimer along the (011) direction. |
| spellingShingle | Chou, C Cockayne, D Zou, J Kringhoj, P Jagadish, C {111} and {311} rod-like defects in silicon ion implanted silicon |
| title | {111} and {311} rod-like defects in silicon ion implanted silicon |
| title_full | {111} and {311} rod-like defects in silicon ion implanted silicon |
| title_fullStr | {111} and {311} rod-like defects in silicon ion implanted silicon |
| title_full_unstemmed | {111} and {311} rod-like defects in silicon ion implanted silicon |
| title_short | {111} and {311} rod-like defects in silicon ion implanted silicon |
| title_sort | 111 and 311 rod like defects in silicon ion implanted silicon |
| work_keys_str_mv | AT chouc 111and311rodlikedefectsinsiliconionimplantedsilicon AT cockayned 111and311rodlikedefectsinsiliconionimplantedsilicon AT zouj 111and311rodlikedefectsinsiliconionimplantedsilicon AT kringhojp 111and311rodlikedefectsinsiliconionimplantedsilicon AT jagadishc 111and311rodlikedefectsinsiliconionimplantedsilicon |