Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Conference item |
| Published: |
2010
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