Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires...
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Bibliographic Details
| Main Authors: |
Kang, J,
Gao, Q,
Joyce, H,
Kim, Y,
Guo, Y,
Xu, H,
Zou, J,
Fickenscher, M,
Smith, L,
Jackson, H,
Yarrison-Rice, J,
Tan, H,
Jagadish, C |
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| Format: | Conference item
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| Published: |
2010
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