Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Conference item |
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2010
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| _version_ | 1826298415529590784 |
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| author | Kang, J Gao, Q Joyce, H Kim, Y Guo, Y Xu, H Zou, J Fickenscher, M Smith, L Jackson, H Yarrison-Rice, J Tan, H Jagadish, C |
| author_facet | Kang, J Gao, Q Joyce, H Kim, Y Guo, Y Xu, H Zou, J Fickenscher, M Smith, L Jackson, H Yarrison-Rice, J Tan, H Jagadish, C |
| author_sort | Kang, J |
| collection | OXFORD |
| description | GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires. © 2010 IEEE. |
| first_indexed | 2024-03-07T04:46:29Z |
| format | Conference item |
| id | oxford-uuid:d37960d8-a488-4ac8-b0cc-483b9df9d900 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T04:46:29Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | oxford-uuid:d37960d8-a488-4ac8-b0cc-483b9df9d9002022-03-27T08:11:26ZStructural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substratesConference itemhttp://purl.org/coar/resource_type/c_5794uuid:d37960d8-a488-4ac8-b0cc-483b9df9d900Symplectic Elements at Oxford2010Kang, JGao, QJoyce, HKim, YGuo, YXu, HZou, JFickenscher, MSmith, LJackson, HYarrison-Rice, JTan, HJagadish, CGaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires. © 2010 IEEE. |
| spellingShingle | Kang, J Gao, Q Joyce, H Kim, Y Guo, Y Xu, H Zou, J Fickenscher, M Smith, L Jackson, H Yarrison-Rice, J Tan, H Jagadish, C Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates |
| title | Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates |
| title_full | Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates |
| title_fullStr | Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates |
| title_full_unstemmed | Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates |
| title_short | Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates |
| title_sort | structural and optical characterization of vertical gaas gap core shell nanowires grown on si substrates |
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