Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires...

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Manylion Llyfryddiaeth
Prif Awduron:	Kang, J, Gao, Q, Joyce, H, Kim, Y, Guo, Y, Xu, H, Zou, J, Fickenscher, M, Smith, L, Jackson, H, Yarrison-Rice, J, Tan, H, Jagadish, C
Fformat:	Conference item
Cyhoeddwyd:	2010

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

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