Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
Dislocation locking experiments have been used to investigate nitrogen-doped float-zone silicon (NFZ-Si). Experiments on NFZ-Si with a nitrogen concentration of 2.2 x 10(15) cm(-3) were carried out at different annealing temperatures (550-830 degrees C) for different annealing times (0-1500 hours) a...
| Glavni autori: | , , , , |
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| Format: | Conference item |
| Izdano: |
2005
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