Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.

Slični predmeti

• GaN nanorods grown on Si (111) substrates and exciton localization.
  od: Park, Y, i dr.
  Izdano: (2011)
• GaN nanorods grown on Si (111) substrates and exciton localization
  od: Holmes Mark, i dr.
  Izdano: (2011-01-01)
• GaN nanorods grown on Si (111) substrates and exciton localization
  od: Park, Y, i dr.
  Izdano: (2011)
• The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy
  od: Park, Y, i dr.
  Izdano: (2006)
• Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
  od: L, S Chuah, i dr.
  Izdano: (2007)