Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.
We have studied the photoluminescence properties of GaN nanorods grown on Si(111) substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shaped nanorods with lateral average diameters from 30 to 150 nm are obtained by controlling the Ga flux with a fixed amount of nitrog...
| Κύριοι συγγραφείς: | , , |
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| Μορφή: | Journal article |
| Γλώσσα: | English |
| Έκδοση: |
2008
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