Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.

Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.

We have studied the photoluminescence properties of GaN nanorods grown on Si(111) substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shaped nanorods with lateral average diameters from 30 to 150 nm are obtained by controlling the Ga flux with a fixed amount of nitrog...

Full description

Bibliographic Details
Main Authors:	Park, Y, Kang, T, Taylor, R
Format:	Journal article
Language:	English
Published:	2008

Similar Items

GaN nanorods grown on Si (111) substrates and exciton localization.
by: Park, Y, et al.
Published: (2011)

The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy
by: Park, Y, et al.
Published: (2006)

GaN nanorods grown on Si (111) substrates and exciton localization
by: Park, Y, et al.
Published: (2011)

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
by: Na, J, et al.
Published: (2005)

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
by: Na, J, et al.
Published: (2005)

Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
by: L, S Chuah, et al.
Published: (2007)

Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)
by: Ravikiran, L., et al.
Published: (2014)

Photoluminescence properties of a single GaN nanorod with GaN/AlGaN multilayer quantum disks
by: Yi, SN, et al.
Published: (2007)

Micro- and Time-resolved Photoluminescence in GaN Nanorods with Different Diameters
by: Park, Y, et al.
Published: (2010)

Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
by: Agrawal, M., et al.
Published: (2013)

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
by: Park, Y, et al.
Published: (2010)

Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy
by: Ng, T. K., et al.
Published: (2013)

Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
by: Li, He Ming.
Published: (2009)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
by: Park, Y, et al.
Published: (2018)

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy
by: Dharmarasu, Nethaji, et al.
Published: (2013)

Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy
by: Ravikiran Lingaparthi
Published: (2015)

Properties of selective-area-growth GaN grown on various buffered Si(111) substrates by HVPE
by: Shin, D, et al.
Published: (2007)

Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy
by: Lingaparthi, R., et al.
Published: (2022)

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy
by: Huo, Lili, et al.
Published: (2023)

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
by: Park, Y, et al.
Published: (2018)

Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy
by: Bae, M, et al.
Published: (2006)

Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy
by: Agrawal, Manvi, et al.
Published: (2017)

The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy
by: Smith, Frank William
Published: (2005)

Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
by: Han, Zhiyong.
Published: (2008)

Photoluminescence studies of the formation of MgS/CdSe quantum dots grown by molecular beam epitaxy
by: Funato, M, et al.
Published: (2002)

A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
by: Zheng, Y., et al.
Published: (2020)

Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs
by: Bablu K. Ghosh, et al.
Published: (2003)

Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods
by: Park, Y, et al.
Published: (2009)

Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source
by: Wang, S. Z., et al.
Published: (2013)

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy
by: Ravikiran, L., et al.
Published: (2015)

Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
by: Chan, C, et al.
Published: (2013)

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
by: Whiteside, Matthew, et al.
Published: (2021)

Studies on plasma assisted molecular beam epitaxial growth of GaN-based multilayer heterostructures on Si for photodetector application
by: Zheng, Yi
Published: (2019)

Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
by: Tyan, S, et al.
Published: (2000)

Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy
by: Huo, Lili, et al.
Published: (2025)

Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method
by: Quang, Hong Le, et al.
Published: (2004)

Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE
by: Sun, Z. Z., et al.
Published: (2011)

Structural and magnetic order in MnAs films grown by molecular beam epitaxy on GaAs for spin injection
by: Daweritz, L, et al.
Published: (2003)

Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy
by: D'Costa, Vijay Richard, et al.
Published: (2015)

Characterisation of compound semiconductors grown by molecular beam epitaxy
by: Zhang, Peng Hua
Published: (2009)